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Observation of extremely long electron-spin-relaxation times in p-type delta-doped GaAs/Al(x)Ga(1-x)As double heterostructures

Extrem lange Elektronenspin-Relaxationszeiten in p-Typ delta-dotierten GaAs/Al(x)Ga(1-x)As Doppelheterostrukturen


Physical Review. B 47 (1993), Nr.8, S.4786-4789
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Fraunhofer IAF ()
GaAs/AlxGa1-xAs double-heterostructure; GaAs/AlxGa1-xAs-Heterostruktur; p-Typ-Dotierung; p-type doping; photoluminescence; Photolumineszenz; spin relaxation

Spin-relaxation dynamics of electrons have been studied in p-type Delta-doped GaAs:Be/AlsubxGasub1minusxAs double heterostructures by time-resolved photoluminescence polarization measurements. A relaxation time of approximately equal to 20 ns has been observed which is two orders of magnitude longer than that reported for corresponding acceptor concentrations in homogeneously doped GaAs. This enhancement, which arises from a drastic reduction of the electron-hole wave-function overlap, demonstrates that electron- hole scattering with a simultaneous exchange interaction dominates spin relaxation at low temperatures.