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Oblique ion implantation into nonplanar targets

: Takai, M.; Namba, S.; Ryssel, H.


Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 59/60 (1991), S.1120-1123 : Abb.,Lit.
ISSN: 0168-583X
Fraunhofer IIS B ( IISB) ()
ion implantation; Monte Carlo methods; semiconductor technology; silicon trench

A two-dimensional Monte Carlo simulation code has been applied to trench implantation as a function of incident angle to investigate the influence of tapered sidewalls in Si trenches on doping uniformity and effiency. Oblique implantation in trenches provides uniform concentration profiles of dopants at sidewalls, whereas nonuniform concentration due to the reflection of ions at the sidewalls are obtained in the trench bottom. A slightly tapered sidewall with an angle of 3degree results in higher doping efficiency by oblique implantation than vertical sidewalls.