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A novel resistor system for AlN

Ein neues Widerstandssystem für AlN
 

International Society for Hybrid Microelectronics -ISHM-:
10th European Microelectronics Conference 1995. Proceedings
Kopenhagen, 1995
ISBN: 87-985510-1-9
S.322-330
European Microelectronics Conference <10, 1995, Kopenhagen>
Englisch
Konferenzbeitrag
Fraunhofer IKTS ()
AlN; Dickschicht; Glas; Glass; palladium; reliability; RuO2; Silber; silver; thick films; Zuverlässigkeit

Abstract
Aluminium nitride (AlN) represents, because of excellent physical and chemical properties, a real alternative to other substrate materials such as alumina and beryllia. Commercially available resistor pastes for alumina bubble on AlN during the firing process and so from nonfunctional layers. The paper introduces a resistor system with a compatible conductor paste and a glass encapsulant. The resistor system is based on ruthenium dioxide (RuO2) with a "non-reducible" glass by AlN. Because RuO2 reacts with AlN we had to find a powder composition allowing gaseous product to escape the layer. A high stability can be achieved by an encapsulation.

: http://publica.fraunhofer.de/dokumente/PX-26598.html