Options
1995
Journal Article
Titel
A novel pseudomorphic (GaAs1-xSbx-InyGa1-yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronics
Alternative
Eine neuartige (GaAs1-xSbx-InyGa1-yAs)/GaAs Bilayer Quantum Well Struktur gitterangepaßt auf GaAs für langwellige Optoelektronik
Abstract
Two types of quantum well (QW) structures grown lattice matched on (100) GaAs have been studied. The first type of structure consists of pseudomorphic GaAsxSb1-x/GaAs (x equal or smaller than 0.3) SQWs which show emission wavelengths longer than those reported for pseudomorphic InyGa1-yAs/GaAs QWs. However, the attractive emission wavelenght of 1.3 nanometre has not been achieved. To reach this goal, a novel type of bilayer QW (BQW) has been grown consisting of a stack of two adjacent pseudomorphic layers of GaAsxSb1-x and InyGa1-yAs embedded between GaAs confinement layers
Author(s)