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Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells.

Nicht resonantes Tunneln von Elektronen und Löchern in GaAs/Al0.35Ga0.65As asymmetrischen Doppel-Quantum Wells


Applied Physics Letters 56 (1990), Nr.4, S.355-357 : Abb.,Tab.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
coupled quantum wells; photoluminescence; quantum wells; time-resolved photoluminescence; tunneling

Nonresonant carrier tunneling is investigated by time-resolved and time-averaged optical methods for a series of samples with various barrier thicknesses. The electron tunneling times decrease exponentially with the decrease of barrier thickness from 8 to 3 nm, and the trend is well described by a semiclassical model. Additional efficient hole tunneling is observed in the 3 nm barrier sample, and the time constant is of the order of 50 ps.