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Nitrogen implanted etch-stop layers in silicon

: Paneva, R.; Temmel, G.; Ryssel, H.; Burte, E.P.


Microelectronic engineering (1995), Nr.27, S.509-512
ISSN: 0167-9317
Micro- and Nano-Engineering <1994, Davos>
Fraunhofer IIS B ( IISB) ()
anisotropes Ätzen; anisotropicetching; Ätzstop; etch stop; microstrukturing; Mikrostrukturierung; nitrogen implantation; silicon; Silizium; SOI; Stickstoffimplantation

The aim of this work is to investigate the possibility to produce an etch-stop layer in silicon through nitrogen ion implantation. The etching process is influenced by nitrogen concentrations in silicon above 1*120cm-3. Under the experimental conditions the observed step height between the implanted region and the unimplanted one did not exceed 1.8 mym.