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1985
Conference Paper
Titel
A new split-gate-MOS-transistor structure for detection of gases
Titel Supplements
Parallelausgabe: Publications 1985. IMS-Duisburg
Abstract
A MOS-transistor-gas-sensor with a split gate structure has been developed and investigated in comparison with a hole-gate-MOSFET. The response time of the split transistor is lower and therefore it can be used better for the detection of adsorption and catalytic reaction of many gases on metal surfaces. (IMS)