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A new split-gate-MOS-transistor structure for detection of gases

Parallelausgabe: Publications 1985. IMS-Duisburg
 
: Dobos, K.; Zimmer, G.

Transducers '85. 3rd International Conference on Solid-State Sensors and Actuators. Digest of technical papers
1985
S.242 ff : Abb.,Lit.
International Conference on Solid-State Sensors and Actuators <3, 1985, Philadelphia/Pa.>
Englisch
Konferenzbeitrag
Fraunhofer IMS ()

Abstract
A MOS-transistor-gas-sensor with a split gate structure has been developed and investigated in comparison with a hole-gate-MOSFET. The response time of the split transistor is lower and therefore it can be used better for the detection of adsorption and catalytic reaction of many gases on metal surfaces. (IMS)

: http://publica.fraunhofer.de/dokumente/PX-26247.html