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New MODFET small signal circuit model required for millimeter-wave MMIC design: extraction and validation to 120 GHz

MODFET-Kleinsignalersatzschaltbild für Millimeterwellen-Schaltungsentwürfe. Extraktion und Verfifikation bis 120 GHz
: Tasker, P.J.; Braunstein, J.

Kirby, L. ; IEEE Industrial Electronics Society:
IEEE MTT-S International Microwave Symposium Digest 1995. Vol.1
New York/N.Y., 1995 (IEEE MTT-S International Microwave Symposium Digest)
International Microwave Symposium <1995, Orlando/Fla.>
Fraunhofer IAF ()
circuit model; GaAs; MODFET; Schaltungsentwurf

A new MODFET circuit model required for millimeter-wave MMIC design has been developed, since it was found conventional MODFET circuit topology normally used was not able to accurately simulate measurement data above 75 GHz. This new model accounts for distributed effects in the transistor layout and includes a modified intrinsic transistor circuit topology. This circuit model has been experimentally validated by on-wafer S-parameter measurements performed to 120 GHz. This was made possible by the development of two advanced millimeter-wave on-wafer S-parameter measurement systems.