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A new large signal model for heterojunction bipolar transistors including temperature effects

: Baureis, P.; McKinley, W.; Seitzer, D.

DOI: 10.1109/CICC.1991.164126

	IEEE Custom Integrated Circuits Conference 1991. Proceedings New York, NY: IEEE, 1991 ISBN: 0-7803-0015-7 ISBN: 0-7803-0016-5 ISBN: 0-7803-0017-3 S.23.3/1-23.3/4
	Custom Integrated Circuits Conference (CICC) <13, 1991, San Diego/Calif.>

	Englisch
	Konferenzbeitrag
	Fraunhofer IIS A ( IIS) ()
	electrothermal modelling; elektothermische Modellierung; Großsignalmodell; HBT; large signal model

Abstract
Description of an eight mode heterojunction bipolar transistor model suitable for circuit simulation, for which the Gummel-Poon model was used as a basis. Both the large signal DC characteristics and the small signal behavior up to 18 GHz are accurately modeled. The non-linear current gain associated with HBTs is included as well as non-linear intrinsic base and collector resistances. the negative ouput conductance seen at high current levels is modeled as a reduction in current proportionally to the power ouput of the transistor.