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New developments of the ELYMAT technique

: Eichinger, P.; Rommel, M.

Kolbesen, B.O:; Claeys, C.; Stallhofer, C.; Tardiff, F. ; Electrochemical Society -ECS-, Electronics Division; International Society of Electrochemistry -ISE-:
Symposium on Crystalline Defects and Contamination 1997. Proceedings. Their impact and control in device manufacturing II
Pennington, NJ: ECS, 1997 (Electrochemical Society. Proceedings 97,22)
ISBN: 1-566-77175-7
Symposium on Crystalline Defects and Contamination <2, 1997, Paris>
Electrochemical Society (Meeting) <192, 1997, Paris>
Fraunhofer IIS B ( IISB) ()
carrier lifetime; elemental semiconductors; minority carrier; passivation; silicon; surface recombination

Injection level analysis of bulk recombination lifetime in silicon wafers with the ELYMAT technique has become possible through the development of high-stability semiconductor laser diode modules with digitally tunable optical output power. This allows for the identification of the chemical nature of dominant recombination centers such as iron and other dissolved metals, and oxygen precipitates. Metal silicide precipitates in the surface layer are quantitatively related to the surface recombination velocity which can be obtained using two lasers with distinctly different absorption depths in silicon (two-color technique).