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1998
Conference Paper
Titel
A new analytical and scaleable noise model for HFET
Alternative
Ein neues analytisches und skalierbares Rauschmodell für Heterostruktur-Feldeffekttransistoren
Abstract
In this paper an analytical noise model for HFET, based on the physical interpretation of the bias dependence of the equivalent intrinsic noise sources, is presented. This model is bias-dependent and scaleable with the gate-geometry and allows the prediction of all noise parameters using two device dependent parameters in a wide bias range.
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