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Near-room-temperature operation of Pb1-XSrXSe infrared diode lasers using molecular beam epitaxy growth techniques.

Die Molekularstrahlepitaxie ermöglicht den Betrieb von Pb1-XSrXSe-Infrarot-Laserdioden nahe Zimmertemperatur
 

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Applied Physics Letters 53 (1988), Nr.26, S.2582-2583 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Englisch
Zeitschriftenaufsatz
Fraunhofer IPM ()
Betriebstemperatur(maximal); Doppel-Heterostrukturlaser; Infrarot-Laserdiode; Infrarot-Nachrichtentechnik; Laserspektroskopie; PbSrSe; Pulsbetrieb

Abstract
Double-heterostructure lasers have been fabricated with an active layer of PbSe sandwiched between cladding layers of PbSrSe. They were operated up to T = 290 K (17 degrees C) in pulse and T = 169 K in cw mode. This is the highest operational temperature in pulsed mode reported for lead salt lasers in the mid-infrared. The emission wavelength tunes with temperature form 8 x 0 mym (T = 20 K) to 4.4 mym (T = 285 K). (IPM)

: http://publica.fraunhofer.de/dokumente/PX-25526.html