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Nature of the 2.8 eV photoluminescence band in Mg doped GaN

Ursprung der 2.8 eV Photolumineszenz-Bande in Mg dotiertem GaN


Applied Physics Letters 72 (1998), Nr.11, S.1326-1328 : Ill.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
D-A lumiescence; D-A Lumineszenz; GaN; Mg-doping; Mg-Dotierung; Selbstkompensation; self compensation

The blue Mg induced 2.8 eV photoluminescence (PL) band in metalorganic chemical vapor deposition grown GaN has been studied in a large number of samples with varying Mg content. It emerges near a Mg concentration of 1x10(exp 19) cm(-3) and at higher concentrations dominates the room temperature PL spectrum. The excitation power dependence of the 2.8 eV band provides convincing evidence for its donor-acceptor (D-A) pair recombination character. It is suggested that the acceptor A is isolated Mg(Ga) while the spatially separated, deep donor (430 meV) D is attributed to a nearest-neighbor associate of a Mg(Ga) acceptor with a nitrogen vacancy, formed by self-compensation.