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Nanostructure patterning with SOR X-ray lithography

: Chlebek, J.; Huber, H.-L.; Oertel, H.K.; Reimer, K.


Microelectronic engineering 23 (1993), Nr.1-4, S.227-230
ISSN: 0167-9317
International Conference on Microcircuit Engineering (ME) <19, 1993, Maastricht>
Fraunhofer ISIT ()
electron resists; masks; nanotechnology; synchrotron radiation; X-ray lithography

A mask technique using a thin (350 nm) e-beam resist layer and Au electro-pulse plating is presented. Isolated absorber lines of 80 nm in size have been successfully fabricated. The absorber lines have been replicated in 300 nm thick PMMA using synchrotron radiation. Mask bias and dose latitude values have been determined for sub-150 nm absorber lines and compared with calculated data.