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Mushroom shaped gates defined by e-beam lithography down to 80 nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess.

Elektronenstrahllithographie von pilzförmigen Gates bis 80 nm Gatelänge und Herstellung von pseudomorphen HEMTs mit trocken geätzter Gatevertiefung

Peckerar, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Electron-beam, x-ray, and ion-beam submicrometer lithographies for manufacturing : 6-7 March 1991, San Jose, California
Bellingham/Wash.: SPIE, 1991 (SPIE Proceedings Series 1465)
ISBN: 0-8194-0564-7
S.201-208 : Abb.,Tab.,Lit.
Electron-beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing Conference <1, 1991, San Jose/Calif.>
Symposium on Microlithography <1991, San Jose/Calif.>
Fraunhofer IAF ()
e-beam lithography; Elektronenstrahllithographie; pseudomorphic HEMT; T-gate

Sub 0.1 Mym mushroom shaped gates (T-gates) have been realized with a three layer resist technique using e- beam exposure. The exposure was carried out on a Philips EPBG-3 system operating at 50 kV. The resist system and writing strategy was investigated. Test exposures on SiN capped GaAs wafers with ohmic contacts having the same topography as active devices were carried out. Using this T-gate lithography pseudomorphic AlGaAs/InGaAs/GaAs HEMTs were fabricated. These devices have transit frequencies of 120 GHz.