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1992
Journal Article
Titel
Multigigahertz varactorless Si bipolar VCO IC.
Alternative
Multigigahertz Si-Bipolar VCO IC ohne Varaktor
Abstract
A high-performance varactorless VCO is introduced, that uses a capacitively-coupled current amplifier as the active device. The test VCO IC realised in a 2 Mym Si bipolar process exhibits a maximum centre frequency of 2 *5GHz, a time jitter of 2 *5ps at 2 GHz, and temperature coefficient of less than 100 ppm/degree C.