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Multicomponent structure in the temperature-dependent persistent photoconductivity due to different DX centers in AlxGa1-xAs-Si.

Multikomponenten-Struktur in der Temperaturabhängigkeit der persistenten Photoleitung aufgrund verschiedener DX-Zentren in AlxGa1-xAs-Si
: Brunthaler, G.; Köhler, K.


Applied Physics Letters 57 (1990), Nr.21, S.2225-2227 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
DX-Centre; DX-Zentrum; III-V Halbleiter; III-V semiconductors; photoconductivity; Photoleitung

The persistent photoconductivity of Si-doped AlGaAs has been investigated by temperature-dependent resistance and Hall effect measurements. After illuminating the samples at low temperature, we observe for the first time distinct structures in the temperature-dependent carrier concentration during the subsequent heating process. These structures are interpreted in terms of the existence of different DX levels below the conduction-band edge.