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MOVPE growth, technology and characterization of Ga0.5In0.5P/GaAs heterojunction bipolar transistors

MOCVD Züchtung, Technologie und Charakterisierung von Ga0.5In0.5P/GaAs Heterobipolartransistoren
 

Gallium arsenide and related compounds 1991. Proceedings
1992
S.293-298 : Abb.,Lit.
International Symposium on Gallium Arsenide and Related Compounds <18, 1991, Seattle/Wash.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
carbon doping; GaInP/GaAs heterostructure; GaInP/GaAs-Heterostruktur; HBT; Kohlenstoffdotierung; MOVPE

Abstract
From LP-MOVPE grown lattice matched GaInP/GaAs layer structures we fabricated conventional Heterojunction Bipolar Transistors (HBTs) and Bipolar Transistors having only a thin GaInP layer between emitter and base (Tunneling Emitter Bipolar Transistors, TEBTs). The base was doped to above 2x10high19 cmhighminus3 with carbon, which - due to its low diffusivity allows precise matching of doping transition and heterojunction even at the high doping levels required for a low base sheet resistance. The conventional HBTs exhibit a common emitter current gain of up to 65 at 10high4 A/qcm collector current density, whereas TEBTs with a 2 and 5 nm thick GaInP layer show values of 10 and 115, respectively. The devices have nearly ideal output characteristics featuring high Early voltages and small offset voltages.

: http://publica.fraunhofer.de/dokumente/PX-25176.html