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Monte-Carlo simulation of silicon amorphization during ion implantation

Monte-Carlo-Simulation von Silicium-Amorphisierung bei Ionenimplantation
 

IEEE Electron Devices Society; Japan Society of Applied Physics -JSAP-:
International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96
Tokyo: Business Center for Academic Societies Japan, 1996
ISBN: 0-7803-2745-4
ISBN: 0-7803-2746-2
S.17-18 : Ill., Lit.
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <1, 1996, Tokyo>
Englisch
Konferenzbeitrag
Fraunhofer IIS B ( IISB) ()
Amorphisierung; amorphization; Halbleitertechnologie; ion implantation; Ionenimplantation; Monte-Carlo simulation; process simulation; Prozeßsimulation; semiconductor technology

: http://publica.fraunhofer.de/dokumente/PX-25116.html