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Monolithic integration of a GaInAs PIN photodiode and AlGaAs/GaAs/AlGaAs HEMTs on GaAs substrate

Monolithische Integration einer GaInAs PIN Photodiode mit AlGaAs/GaAs/AlGaAs HEMTs auf GaAs Substrat
 

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Melloch, M.; Reed, M.A. ; IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society:
IEEE International Symposium on Compound Semiconductors 1997. Proceedings
Bristol: IOP Publishing, 1998
ISBN: 0-7803-3883-9
ISBN: 0-7803-3884-7
S.383-396
International Symposium on Compound Semiconductors <24, 1997, San Diego/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
GaInAs; optoelectronics; Optoelektronik; photodiode; Photoempfänger; photoreceiver

Abstract
A monolithic integrated optoelectronic receiver for a wavelength of 1.55 mu m consisting of a GaInAs PIN diode and a transimpedance AlGaAs/GaAs HEMT amplifier has been fabricated. The available technology includes three etch processes, five metal lift-off processes, an oxygen implantation for device isolation, two dielectric layers of SiN and an electroplated gold interconnection layer. The gate levels for enhancement and depletion FETs were carried out using c-beam lithography with gate lengths of 0.3 mu m. The responsivity of the photodiodes is 0.40 A/W, and the photoreceiver has a -3 dB bandwidth of 6.9 GHz. Clear and open eye diagrams for a 10 Gbit/s optical data stream have been obtained. At this data rate the sensitivity of the photoreceiver is better than - 17.5 dBm (BER=10(exp -9)). The yield oft this circuit is better than 80 per cent realized on 2'' wafers.

: http://publica.fraunhofer.de/dokumente/PX-24988.html