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Monolithic 10 channel 10 Gbit/s amplifier array using 0.3 mu m AlGaAs/GaAs-HEMTs

Monolithischer 10-Kanal-10Gbit/s-Verstärker-Array in 0,3 Mikrometer AlGaAs/GaAs-HEMT Technologie


Electronics Letters 32 (1996), Nr.18, S.1708-1709
ISSN: 0013-5194
Fraunhofer IAF ()
HEMT; integrated circuit; integrierte Schaltung; optical communication equipment; optisches Kommunikationssystem

A monolithic 10 channel limiting amplifier for high speed optical fibre communication system based on 0.3 mu m gate length enhancement and depletion AlGaAs/GaAs-HEMTs (fT = 50/ 45GHz) has been fabricated. Each channel has a small signal differential gain of 35dB and a bandwidth of 8.5GHz, the amplifier array operates reliably up to 10 Gbit/s. The differential output voltages are limited to 1,2V(P-P). The power consumption is 2.5W at a single supply voltage of -5V.