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Molecular beam epitaxy of Pb1-xSrxSe for the use in IR devices

Molekularstrahlepitaxie von Pb1-xSrxSe zur Verwendung in IR-Bauelementen

Journal of Crystal Growth (1991), S.301-308 : Abb.,Lit.
ISSN: 0022-0248
Fraunhofer IAF ()
Fraunhofer IPM ()
hall measurement; Hall-Messung; IR-laser; MBE; molecular beam epitaxy; Molekularstrahlepitaxie; Pb1-xSrxSe; Röntgendiffraktometrie; x-ray diffractometry

PbSrSe grown by molecular beam epitaxy (MBE) is investigated as a material for mid-infrared devices. Properties of PbSrSe films grown on BaF sub 2(111) substrates are compared with those of PbEuSe films. Sr and Eu concentrations in the films have been determined spectroscopically (AAS, AES, EDX). Lattice parameters of Pb salt films. BaF2 substrate and PbSe bulk material have been assessed by X-ray diffraction. Electronic properties at 300 and 77 K were investigated using Hall measurements. With increasing Sr or Eu content the bandgap energy increases strongly while the lattice constant changes very little. Thus only minor strains are expected using PbSrSe as cladding material in a double heterostructure laser. Hall data favour the application of the Sr ternary alloy.