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A modified plasma source for controlled layer thickness synthesis in laser pulse vapour deposition -LPVD-.

Eine modifizierte Plasma Quelle für kontrollierte Schichtdickensynthese bei der Laserimpuls-Gasphasenabscheidung -LPVD-
: Dietsch, R.; Mai, H.; Pompe, W.; Völlmar, S.


Advanced Materials for Optics and Electronics 2 (1993), S.19-29 : Abb.,Lit.
ISSN: 1057-9257
ISSN: 1099-0712
NATO/ASI (Workshop) <1992, Viana do Castelo>
Fraunhofer IWS ()
dünne Schicht; laser ablation; Ni/C multilayer structure; Ni/C-Multischicht; plasma source; Plasmaquelle; Röntgenspiegel; SNMS depth profiling; SNMS-Tiefenprofilanalyse; TEM-cross-section; thin films; UHV-Abscheideeinrichtung; UHV-deposition equipment; X-ray mirror

The conventional thin film deposition equipment of LPVD has been modified for the preparation of nm-layer stacks of uniform thickness at reduced target/substrate separation. Therefore the planar target was replaced by a cylindrical one and the target motion regime has been modified. During thin film deposition a substrate translation is preferred instead of the usual rotation technique. With this arrangement the emission characteristic of the plasma source can be computer controlled and tailored via a stepper motor driven manipulator for the desired layer thickness profile across an extended substrate. Thus e.g. homogeneous film thickness is obtained even for lower target/substrate distances and an appropriate deposition rate can be maintained. First applications of the equipment are explained and compared with typical results of the conventional technique.