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The modelling of platinum diffusion in silicon under non-equilibrium conditions

: Zimmermann, H.; Ryssel, H.


Journal of the Electrochemical Society 139 (1992), Nr.1
ISSN: 0013-4651
Fraunhofer IIS B ( IISB) ()
kick-out mechanism; platinum diffusion; process modeling; semiconductor technology

The diffusion of platinum in silicon is described by the kick-out and by the dissociative mechanism. The resulting set of four coupled differential equations is solved numerically without any simplification. The authors find that the concentration of substitutional platinum is strongly influenced by the initial concentration of vacancies. As a result of their work, they suggest a complete set of parameters which describes the diffusion of platinum in silicon in the temperature range from 700 to 950degreeC. The dissociative mechanism dominates below 850degreeC and the kick-out mechanism above 900degreeC. The reaction constant for the dissociative mechanism can be estimated to be 1.6 x 10highminus14 ccmshighminus1, whereas the reaction constant of the kick-out mechanism is of the order of 1.7 x 10highminus4 shighminus1 at 700degreeC. Platinum diffusion below 850degreeC is suggested as a means of measuring vacancy distributions in silicon.