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Modelling of illumination effects on resist profiles in X-ray lithography

 
: Oertel, H.; Weiß, M.; Huber, H.-L.; Vladimirsky, Y.; Maldonado, J.R.

Peckerar, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Electron-beam, x-ray, and ion-beam submicrometer lithographies for manufacturing : 6-7 March 1991, San Jose, California
Bellingham/Wash.: SPIE, 1991 (SPIE Proceedings Series 1465)
ISBN: 0-8194-0564-7
S.244-253
Electron-beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing Conference <1, 1991, San Jose/Calif.>
Symposium on Microlithography <1991, San Jose/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer ISIT ()
integrated circuit technology; photoresists; semiconductor technology; synchrotron radiation; X-ray lithography

Abstract
Image intensity profiles and resist profile calculations using the XMAS simulation program are presented for storage ring X-ray lithography proximity printing under several illumination conditions. The calculations indicate the existence of a wide process window for the simultaneous replication of several kinds of subquarter-micron features.

: http://publica.fraunhofer.de/dokumente/PX-24644.html