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MOCVD of ferroelectric thin films

: Schmidt, C.; Burte, E.P.

Allendorf, M.D. ; Electrochemical Society -ECS-, High Temperature Materials Division; Electrochemical Society -ECS-, Dielectric Science and Technology Division:
Chemical vapor deposition. Proceedings of the fourteenth international conference and EUROCVD-11
Pennington, NJ: ECS, 1997 (Electrochemical Society. Proceedings 97-25)
ISBN: 1-566-77178-1
International Conference on Chemical Vapor Deposition (CVD) <14, 1997, Paris>
EUROCVD <11, 1997, Paris>
Electrochemical Society (Meeting) <192, 1997, Paris>
Fraunhofer IIS B ( IISB) ()
Ferroelektrika; MOCVD; PZT

A low pressure chemical vapor deposition system for growing ferroelectric thin films of lead-zirkonate-titanate has been developed. The liquid metal precursors are dosed by up to four self-contained dispense systems with vaporizers. The deposition is carried out in a cold-wall reactor at pressures below 1 Torr and at temperatures between 330 deg C and 450 deg C. The thickness of the deposited films ranged from 10 nm to 600 nm. The investigated films are lead-titanate PbTiO3 and lead-zirconate-titanate Pb(Zr,Ti)O3. They show high permittivity values and ferroelectric hysteresis of the electrical polarisation, which could be increased by post-deposition annealing.