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MOCVD growth of (Ga(1-x)In(x)As-GaAs(1-y)Sb(y))superlattices on InP showing type-II emission at wavelengths beyond 2 mu m

Wachstum von (Ga(1-x)In(x)As-GaAs(1-y)Sb(y))-Übergittern auf InP-Substrat mit Typ II Emission längerwellig 2 mu m


Melloch, M.; Reed, M.A. ; IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society:
IEEE International Symposium on Compound Semiconductors 1997. Proceedings
Bristol: IOP Publishing, 1998
ISBN: 0-7803-3883-9
ISBN: 0-7803-3884-7
International Symposium on Compound Semiconductors <24, 1997, San Diego/Calif.>
Fraunhofer IAF ()
mid infrared; mittleres Infrarot; MOCVD; räumlich indirekte Emission; spatially indirect emission

We report, on (Ga(1-x)In(x)As- GaAs(1-y)Sb(y)) superlattices grown strain-compensated on ( 100) InP:Fe substrates using new organic chemical vapor deposition. Low temperature photoluminescence measurement show a spatially indirect type-II recombination of electrons in the conduction band of the Ga(1-x)In(x)As and holes in the valence band of the GaAs(1-y)Sb(y) layers at 2.20 mu m. Type-II emission was observed up to room-temperature with 300 K emission centered at 2.30 mu m. The valence and conduction band offsets between strain-compensated Ga(0.24)In(0.58)As and GaAs(1-y) Sb(y) (y about 0.27 to 0.3) layers were estimated to 0.21 eV and 0.33 - 0.39 eV, respectively.