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Mobility enhancement due to spatial correlation of remote impurity charges in delta-doped AlGaAs/GaAs heterostructure

Beweglichkeitserhöhung aufgrund der räumlichen Korrelation von entfernten Verunreinigungsladungen in delta-dotierten AlGaAs/GaAs Heterostrukturen

Lockwood, D.J.:
22nd International Conference on the Physics of Semiconductors 1995. Vol. 1
Singapore: World Scientific, 1995
ISBN: 981-02-2978-X
S.883-886 : Abb.,Lit.
International Conference on the Physics of Semiconductors <22, 1995, Vancouver>
Fraunhofer IAF ()
heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; quantum wells

We have examined variation of 2 DEG mobility with carrier concentration, NdeepS, for modulation Delta-doped single quantum well of AlGaAs/GaAs. High concentration of remote Si donors results in population of two subbands. Application of hydrostatic pressure enabled us to reduce NdeepS and to populate eventually only one subbband. We have demonstrated that, depending on the method electrons are distributed among remote impurity sites, different values of 2 DEG mobility can be achieved for the same NdeepS. The origin of the finding is associated with the spatial correlations of remote impurity charges (positively charged donors d+ and negatively charged DX- states of Si-donors).