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Mobility and quantum lifetime in a GaAs/AlGaAs heterostructure. Tuning of the remote-charge correlations

Beweglichkeit und Quantenlebensdauer in einer GaAs/AlGaAs Heterostruktur. Einstellen der Fernladungs-Korrelation


Surface Science 361/362 (1996), S.579-582
ISSN: 0039-6028
Fraunhofer IAF ()
heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; quantum wells

We demonstrate that different spatial correlations among remote impurity charges in the GaAs/AlGaAs quantum well lead to different values of (i) the transport-relaxation time, (ii) the single-particle relaxation time, and that (iii) the different width of the integer quantum Hall plateauxs could be achieved. These findings supply qualitatively new information about the important contribution of the non-random arrangement of remote charges to the transport properties of semiconductor heterostructures.