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Microwave Devices on AIN - Ceramics for High Frequencies

: Reppe, G.; Große, M.; Kretzschmar, C.; Scheffel, A.

Welterlen, J.D. ; International Microelectronics and Packaging Society -IMAPS-:
International Symposium on Microelectronics 1998. Proceedings : November 1 - 4, 1998, San Diego Convention Center, San Diego, California
Reston, Va.: IMAPS, 1998 (SPIE Proceedings Series 3582)
ISBN: 0-930815-52-1
International Symposium on Microelectronics <1998, San Diego/Calif.>
Fraunhofer IKTS ()
aluminium nitride; Attenuators; thick film; Trimming

There is an increasing demand for the application of microwave components at higher frequencies. Of course, the thick film technology has got limits in comparison with the thin film technology. The paper describes how you can solve the arising problems of a higher power density with the help of a suitable thick film ink system and the appropriate technological manufacturing steps. In addition, attenuators with two different square resistance have been calculated and produced by using the possibilities of thick film technology. To achieve the application of microwave devices above 12,4 GHz special thick film structures have been developed and realized. The determined dependances show that it is possible to apply attenuators on aluminium nitride ceramics with good electrical characteristics, also at frequencies up to 18 GHz.