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Measurement of wafer temperature by interference

: Bollmann, D.; Haberger, K.


Microelectronic engineering 19 (1992), S.383-388
ISSN: 0167-9317
European Solid State Device Research Conference <22, 1992, Leuven>
Fraunhofer IFT; 2000 dem IZM eingegliedert
interference; measurement; optical; pyrometer; RTP reactor; siliconwafer; temperature

A new method of measuring the temperature of a silicon wafer in an RTP-Reaktor is described. It is based on the thermal expansion of the bulk silicon that is measured by a laser-interferometer. Thus it avoids the usual problems of a pyrometer like changing optical properties of the wafer surface. The method is especially suitable for processes below 600 degree C.