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1991
Journal Article
Titel
Measurement of SOI film thickness
Abstract
A new electrical, nondestructive measurement technique that allows for a fast and reliable determination of the silicon thickness in fully depletable silicon on insulator capacitors is presented. This technique is based on a simple 2-terminal high frequency C(V) measurement performed on an SOI capacitor with film contact. The method is illustrated on devices built on SIMOX substrates.