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MBE growth of metamorphic In(Ga)AlAs buffers

Abscheidung metamorpher In(Ga)AlAs Pufferschichten mit der MBE
: Sexl, M.; Böhm, G.; Maier, M.; Tränkle, G.; Weimann, G.; Abstreiter, G.


Melloch, M.; Reed, M.A. ; IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society:
IEEE International Symposium on Compound Semiconductors 1997. Proceedings
Bristol: IOP Publishing, 1998
ISBN: 0-7803-3883-9
ISBN: 0-7803-3884-7
S.49-52 : Ill., Lit.
International Symposium on Compound Semiconductors <24, 1997, San Diego/Calif.>
Fraunhofer IAF ()
In(Ga)AlAs; MBE; metamorph; metamorphic; relaxation; transport property; Transporteigenschaft

Metamorphic buffer layers were grown by MBE on GaAs-substrates using linearly graded InAlAs and InGaAlAs buffers to accommodate lattice misfit. The surface morphology was investigated by AFM, the relaxation behavior of the metamorphic buffers are studied by high resolution X-ray diffraction. The degree of relaxation is 86 per cent for the ternary buffer and 90 per cent for the quarternary buffer. Increasing the final In-composition of the buffer up to a value of 0. 63 the In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As layers on top of the metamorphic buffer are unstrained Transport properties 2DEG-structures approach those of lattice matched reference samples on InP-substrates.