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Matrix effect in Cs+ attachment SIMS of III-V compound semiconductors

Matrixeffekt der MCs+-SIMS von III-V-Verbindungshalbleitern
: Maier, M.

Benninghoven, A.; Hagenhoff, B.; Werner, H.W. ; Univ. Münster:
Secondary ion mass spectrometry. Proceedings of the Tenth International Conference on Secondary Ion Mass Spectrometry SIMS X
Chichester: Wiley, 1997
ISBN: 0-471-95897-2
International Conference on Secondary Ion Mass Spectrometry <10, 1995, Münster>
Fraunhofer IAF ()
III-V compound semiconductors; III-V Verbindungshalbleiter; matrix effect; Matrixeffekt; SIMS

Cs+ attachment SIMS, i.e. sputtering with Cs primary ions and monitoring the emitted MCs+ secondary ions (M = element to be analysed), has been increasingly used in SIMS depth profiling. One reason is that the dependence of the MCs+ ion yield on the element M is small compared with elemental M+ or M- ion yields. In addition, the matrix effect, i.e. the variation of the MCs+ ion yield of an element M in compounds of various composition, was found to be nearly negligible in analyses especially of III-V compound semiconductors like Al(x)Ga(l-x)As and In(y)Ga(l-y)As. However, a clear matrix effect was observed in the analysis of group V, VI and VII elements in SiO as compared with Si. In this paper, the element specific variation and the matrix effect of MCs+ ion yields of the group III elements Al, Ga and In and the group V elements N, P, As and Sb are investigated in a large number of technologically important compound semiconductors based on these elements. Conclusions are drawn for qua ntitative analysis.