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Magneto-photoluminescence excitation spectroscopy in a centre Si delta-doped GaAs/Al0.33Ga0.67As double heterostructure.

Magneto-Photolumineszenzanregungsspektroskopie an im Zentrum Si delta-dotierten GaAs/Al0.33Ga0.67As Doppelheterostrukturen
: Wagner, J.; Calleja, J.M.; Mestres, N.; Richards, D.; Fischer, A.; Ploog, K.


Semiconductor Science and Technology 9 (1994), S.1204-1208
ISSN: 0268-1242
ISSN: 1361-6641
Fraunhofer IAF ()
GaAs(AlGa)As Doppelheterostruktur; GaAs(AlGa)As double heterostructure; magneto-photoluminescence; Magneto-Photolumineszenz; photoluminescence excitation; Photolumineszenzanregungsspektroskopie; Si delta-doping; Si Deltadotierung

A centre Si delta-doped GaAs/Al0.33Ga0.67As double heterostructure has been studied by photoluminescence excitation spectroscopy in perpendicular magnetic fields up to 13.5 T. Landau level transitions are identified to originate from the highest occupied electron subband. With increasing field a depopulation of that electron subband is observed. The value of the field at which this depopulation occurs depends on the position of the Fermi level, which can be varied in the present sample structure by changing the intensity of the optical excitation.