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Luminescence of the rare-earth ion ytterbium in InP, GaP, and GaAs
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1985
Journal Article
Titel
Luminescence of the rare-earth ion ytterbium in InP, GaP, and GaAs
Author(s)
Pomrenke, G.
Axmann, A.
Ennen, H.
Zeitschrift
Journal of applied physics
DOI
10.1063/1.334359
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
Elektronenbestrahlung
implantation
Photolumineszenz
Seltene Erden
Ytterbium III-V-Halbleiter