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1994
Journal Article
Titel
Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers
Alternative
33 GHz InGaAs/GaAs/AlGa pseudomorphischer MQW-Rippenwellenleiter-Laser mit kleinem Vorstrom
Abstract
Modulation bandwidths of 24 GHz (Ibias=25 mA) and 33 GHz (Ibias=65 mA) are demonstrated for 3*100 mym2 In0.35 Ga0.65 As/GaAs multiple quantum well ridge-waveguide lasers with undoped and p-doped active regions, respectively. These performance enhancements have been achieved both by lowering the growth temperature of the high-Al-mole-fraction cladding layers and by utilizing short-cavity devices, fabricated with dry-etched facts using chemically-assisted ion-beam etching. Both the undoped and p-doped lasers also demonstrate modulation current efficiency factors exeeding 5 GHz/mA 1/2, the best reported results for any semiconductor laser.
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