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Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration

Direkte Modulation bis 33 GHz bei niedrigem Bias-Strom in GaAs-basierendem monolithisch integrierbaren MQW-Rippenwellenleiter-Lasern


Institute of Electrical and Electronics Engineers -IEEE-:
14th IEEE International Semiconductor Laser Conference
New York/N.Y., 1994
S.211-212 : Abb.
International Semiconductor Laser Conference <14, 1994, Hawaii>
Fraunhofer IAF ()
InGaAs/GaAs; MBE; modulation bandwidth; Modulationsbandbreite; monolithic integration; monolithische Integration; pseudomorphe Struktur; pseudomorphic structure

Modulation bandwidths of 24 GHz (Ibias=25 mA) and 33 GHz (Ibias=65 mA) are demonstrated for 3*100 mym2 In0.35 Ga0.65 As/GaAs multiple quantum well ridge-waveguide lasers with undoped and p-doped active regions, respectively. These performance enhancements have been achieved both by lowering the growth temperature of the high-Al-mole-fraction cladding layers and by utilizing short-cavity devices, fabricated with dry-etched facts using chemically-assisted ion-beam etching. Both the undoped and p-doped lasers also demonstrate modulation current efficiency factors exeeding 5 GHz/mA 1/2, the best reported results for any semiconductor laser.