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Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs

Langwellige MSM-HEMT und PIN-HEMT-Photoempfänger auf GaAs-Substraten


IEEE Electron Devices Society; IEEE Microwave Theory and Techniques Society:
19th GaAs IC Symposium 1997. Technical digest
Piscataway, NJ: IEEE, 1997
ISBN: 0-7803-4083-3
S.197-200 : Ill.
GaAs IC Symposium <19, 1997, Anaheim/Calif.>
Fraunhofer IAF ()
HEMT; Photoempfänger; photoreceiver

1.3-1.55 mu m wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolithically integrated on GaAs substrates using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. The In(0.53)Ga(0.47)As MSM and PIN photodiodes grown on GaAs have nearly identical characterstics as photodiodes grown on InP.