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Light-emitting porous silicon diode with an increased electroluminescence quantum efficiency

: Steiner, P.; Kozlowski, F.; Lang, W.


Applied Physics Letters 62 (1993), Nr.21
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IFT; 2000 dem IZM eingegliedert
light-emitting diode; optoelectronics; porous silicon

The fabrication technology and the properties of a light-emitting device including a porous pn junction are presented. We employ the selective formation of different kind of porous silicon substructures caused by the doping level and the illumination during anodization. The device has a nanoporous light-emitting n layer between a mesoporous phighplus -doped capping layer and the macroporous n substrate. The pn junction formed in this way has strong rectifying characteristics. It shows bright red-orange light emission under forward bias. Compared to simple metal-porous silicon devices, the structure has an increased quantum efficiency (factor 10-100).