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1988
Conference Paper
Titel
Laser recrystallization of polysilicon for improved device quality
Abstract
Thin polysilicon layers have been recrystallized using an argon laser scanning system. Integrated absorbers has been used in order to achieve an entrainment of the grain boundaries. MOS transistors have been fabricated in such recrystallized films and characterized through electrical measurements. (IFT)
Konferenz
Language
English