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1989
Conference Paper
Titel
Laser recrystallization for three-dimensional integration
Abstract
Ar laser recrystallization of polycrystalline silicon-on-insulator layers for 3-dimensional integration is discussed. Attention is given to geometry and composition of anti-reflection stripes as well as to recrystallization conditions preventing substrate damage. Functioning devices both in the substrate and in the top layer have been fabricated.
Konferenz
Language
English