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Laser induced photolytic tin deposition with high deposition rates for the repair of clear X-ray mask defects

: Putzar, R.; Petzold, H.-C.; Schaffer, H.; Weigmann, U.

Microelectronic engineering 9 (1989), Nr.1-4, S.175-178
ISSN: 0167-9317
International Conference on Microlithography: Microcircuit Engineering (ME) <14, 1988, Wien>
Fraunhofer ISIT ()
chemical vapour deposition; masks; photolysis; X-ray lithography

The laser induced photolytic deposition of tin from tetramethyltin is a useful method for the repair of clear defects on X-ray masks because this process meets most of the specific demands on the X-ray mask technology. The principally low deposition rates of photolytic processes could be enhanced by one order of magnitude by adding oxygen to the tetramethyltin precursor gas. The tin spots could be micromachined with a focussed ion beam (FIB) resulting in very steep tin edges. Furthermore, for the first time real clear defects have been repaired on X-ray masks which will be used for the production of devices and ion projection masks.