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1990
Journal Article
Titel
A JFET-CMOS radiation-tolerant charge-sensitive preamplifier
Abstract
A monolithic charge-sensitive preamplifier based on n-channel junction field-effect transistors (JFET's) and p-channel MOS has been realized for applications with multielectrode detectors in elementary particle physics. Radiation resistance tests carried out with the preamplifier exposed to gamma-rays emitted by a 60Co source have shown no significant increase of the equivalent noise source up to 150-krd absorbed dose.