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Ionized donor bound excitons in GaN

An ionisierte Donatoren gebundene Exzitonen in GaN


Applied Physics Letters 71 (1997), Nr.13, S.1837-1839 : Ill.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
D+X; excitons; Exziton; GaN

The temperature and excitation power dependence of a bound exciton photoluminescence line S with a localization energy Q=11.5 meV has been studied in undoped and moderately Mg-doped wurtzite GaN of high resistivity. The data provide strong evidence that line S is due to recombination of excitons bound to ionized shallow donors. The consistency of this assignment with theoretical predictions is demonstrated.