Ion-beam mixing of Co-Si and Co-SiO2 - a comparison between Monte Carlo simulations experiments

We could separate ballistic and thermal effects by ion-beam mixing of Co-Si with As and Ge ions by comparing calculated (T-DYN) and experimental (SIMS) concentration profiles. In case of ion-beam mixing Of Co-SiO2 it could be shown that the Co distribution in the oxide is caused only by recoil implantation and not by diffusion processes or reactions. The performed experiments showed that the T-DYN simulation program is a helpful tool to investigate the physical nature of ion-beam mixing processes and it can be also used to optimize mixing parameters.