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Ion-beam mixed MoSi2 layers - formation and contract properties

Ionenstrahlgemischte MoSi2-Schichten - Bildung und Kontakteigenschaften
: Dehm, C.; Gyulai, J.; Ryssel, H.; Valyi, G.

Heuberger, A.; Ryssel, H.; Lange, P.:
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Berlin/West: Springer, 1989
ISBN: 3-540-51000-1
European Solid State Device Research Conference <19, 1989, Berlin>
Fraunhofer IIS B ( IISB) ()
Amorphisierung; amorphization; Flacher pn-Übergang; ion beam mixing; Ionenstrahlmischen; rapid thermal annealing; schnelles Ausheilen; shallow junction; silicide

Diodes with high conductivity Molybdenum-silicide-contacts were fabricated using self-aligned silicide technology and ion-beam mixing for silicidation. For optimizing contact properties, different ion-beam mixing processes were compared. The first mixing process investigated was a conventional one, using arsenic ions for silicide formation and doping of the underlying silicon substrate. After mixing, rapid thermal annealing was performed in a Nitrogen ambient to form stoichiometric silicide layers. The second ion-beam mixing process included a sequence of implantations: Silicon ions were used to cause mixing between the Mo-film and the underlying substrate. Rapid thermal annealing in Nitrogen ambient for silicidation was followed by a further silicon implantation to amorphize silicon substrate before junction doping by arsenic ion was performed. Electrical measurements were used to determine contact properties.