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Investigation of degraded laser diodes by chemical preparation and luminescence microscopy

Untersuchung degradierter Laserdioden durch chemische Präparation und Lumineszenz-Mikroskopie
 

Donecker, J.; Rechenberg, I.:
Defect recognition and image processing in semiconductors 1997. Proceedings
Philadelphia: IOP Publishing, 1998 (Institute of Physics - Conference Series 160)
ISBN: 0-7503-0500-2
S.467-470
International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP) <7, 1997, Templin>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
InGaAs/AlGaAs laser; photoluminescence microscopy; Photolumineszenz-Mikroskopie

Abstract
The gradual degradation of 808 nm InGaAlAs/AlGaAs and 940 nm InGaAs/AlGaAs high power laser diodes has been investigated by plane view photoluminescence microscopy of the active layer. 940 nm lasers degraded by long-term operation revealed broad dark bands. The defect pattern of intentionally overheated devices shows dark spots and lines for both laser systems.

: http://publica.fraunhofer.de/dokumente/PX-19894.html