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Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum-well structures

Intersubband-Resonanzen in partiellen interdiffundierten GaAs/AlGaAs Multiple Quantum-Well Strukturen
 

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Journal of applied physics 70 (1991), Nr.4, S.2195-2199 : Abb.,Lit.
ISSN: 0021-8979
ISSN: 1089-7550
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
GaAs; infrared detector; Infrarotdetektor; Interdiffusion; intersubband absorption; Intersubband-Resonanz; Kurzzeittemperung; quantum wells; rapid thermal anneal

Abstract
Continuous tuning over the entire 8-12 mym wavelength range is demonstrated for the intersubband absorption resonance in n-doped GaAs/AlxGa1-xAs multiple quantum-well structures following partial interdiffusion of the well and barrier layers via rapid thermal annealing. The data indicate that redshifting of the intersubband absorption resonance arises both from interdiffusion-induced modification of the confining potential and from a decrease in the depolarization shift. The later effect is due in part to a decrease in the freecarrier concentration within the Si-doped quantum wells following rapid thermal annealing. Significant diffusion of the localized Si dopant is also observed over the range of annealing temperatures investigated here. Calculated values of the Al-Ga interdiffusion coefficient, as a function of anneal temperature, indicate that Si diffusion through the heterointerfaces contributes substantially to layer intermixing.

: http://publica.fraunhofer.de/dokumente/PX-19828.html