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Intersubband plasmon-phonon modes of a quasi two-dimensional electron gas in GaAs

Intersubband Plasmon-Phonon-Moden eines quasi zweidimensionalen Elektronengases in GaAs
: Friedrich, T.; Rösch, M.; Latussek, V.; Batke, E.; Köhler, K.; Ganser, P.

Scheffler, M.; Zimmermann, R.:
23rd International Conference on the Physics of Semiconductors 1996. Vol. 3
Singapore: World Scientific, 1996
ISBN: 981-02-2777-9
S.2295-2298 : Ill., Lit.
International Conference on the Physics of Semiconductors <23, 1996, Berlin>
Fraunhofer IAF ()
heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; optical process; optischer Prozeß

The coupling of longitudinal-optical bulk phonons to grating induced intersubband resonances was investigated for electrons in a GaAs quantum well by far-infrared transmission and reflection spectroscopy. The density dependence of the mode frequencies is in good agreement with predictions for a well embedded in two semi-infinite half spaces of the barrier material. A strong asymmetry of the line shape was observed that arises from influence of the grating coupler.